2N6661JTXV02
  • image of 2N6661JTXV02

2N6661JTXV02

Category:
-
Manufacturer:
Description:
MOSFET N-CH 90V 860MA TO39
Package:
Packaging:
Tube
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
Rds On (Max) @ Id, Vgs
4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Grade
Military
Drain to Source Voltage (Vdss)
90 V
Qualification
MIL-PRF-19500
Power Dissipation (Max)
725mW (Ta), 6.25W (Tc)
Current - Continuous Drain (Id) @ 25°C
860mA (Tc)