AIMZHN120R080M1TXKSA1
  • image of AIMZHN120R080M1TXKSA1

AIMZHN120R080M1TXKSA1

Category:
-
Manufacturer:
Description:
SIC_DISCRETE
Package:
Packaging:
Tube
RoHS：
YES
Price:
$11.22

Request a Quote

Stock 1869

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Drain to Source Voltage (Vdss)
1200 V
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 20 V
Package / Case
TO-247-4
Technology
SiCFET (Silicon Carbide)
Power Dissipation (Max)
169W (Tc)
Vgs (Max)
+23V, -5V
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Supplier Device Package
PG-TO247-4-14
Rds On (Max) @ Id, Vgs
100mOhm @ 10A, 20V
Vgs(th) (Max) @ Id
5.1V @ 3.3mA
Input Capacitance (Ciss) (Max) @ Vds
671 pF @ 800 V