BCW65CLT1G
  • image of BCW65CLT1G

BCW65CLT1G

Category:
-
Manufacturer:
Description:
TRANS NPN 32V 0.8A SOT23-3
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$0.21

Request a Quote

Stock 9636

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
2N3906
Shenzhen Slkormicro Semicon Co., Ltd.
40V 625MW 100@10MA,1V 200MA PNP
MMBT3906T
Shenzhen Slkormicro Semicon Co., Ltd.
40V 150MW 200MA PNP SOT-523
S9013W
Shenzhen Slkormicro Semicon Co., Ltd.
25V 200MW 120@50MA,1V 500MA SOT-
2SB1132-R
Shenzhen Slkormicro Semicon Co., Ltd.
32V 500MW 1A PNP SOT-89
MMBT3904M
Shenzhen Slkormicro Semicon Co., Ltd.
40V 100MW 200MA NPN SOT-723
BC817-16
Shenzhen Slkormicro Semicon Co., Ltd.
45V 300MW 100@100MA,1V 500MA NPN
S8550T
Shenzhen Slkormicro Semicon Co., Ltd.
25V 300MW 500MA PNP SOT-523
MMBT3904T
Shenzhen Slkormicro Semicon Co., Ltd.
40V 150MW 100@10MA,10V 200MA NPN
2SA1774-R
Shenzhen Slkormicro Semicon Co., Ltd.
50V 150MW 120@0.1MA,6V 150MA SOT
2SAR579D3FRATLQ
ROHM Semiconductor
PNP, TO-252 (DPAK), -160V -1.5A,
Specifications
Part Status
Active
Mounting Type
Surface Mount
Transistor Type
NPN
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Collector (Ic) (Max)
800 mA
Package / Case
TO-236-3, SC-59, SOT-23-3
Frequency - Transition
100MHz
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
20nA
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 100mA, 1V
Voltage - Collector Emitter Breakdown (Max)
32 V
Supplier Device Package
SOT-23-3 (TO-236)
Power - Max
225 mW