BUK663R2-40C,118
  • image of BUK663R2-40C,118

BUK663R2-40C,118

Category:
-
Manufacturer:
Description:
NEXPERIA BUK663R2-40C - 100A, 40
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$0.73

Request a Quote

Stock 2324

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs (Max)
±16V
Supplier Device Package
D2PAK
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Vgs(th) (Max) @ Id
2.8V @ 1mA
Rds On (Max) @ Id, Vgs
3.2mOhm @ 25A, 10V
Power Dissipation (Max)
204W (Tc)
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8020 pF @ 25 V