C3M0060065D
  • image of C3M0060065D

C3M0060065D

Category:
-
Manufacturer:
-
Description:
SICFET N-CH 650V 37A TO247-3
Package:
Packaging:
Tube
RoHS：
YES
Price:
$19.93

Request a Quote

Stock 2006

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Power Dissipation (Max)
150W (Tc)
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
37A (Tc)
Drain to Source Voltage (Vdss)
650 V
Operating Temperature
-40°C ~ 175°C (TJ)
Supplier Device Package
TO-247-3
Drive Voltage (Max Rds On, Min Rds On)
15V
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+15V, -4V
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 15 V
Rds On (Max) @ Id, Vgs
79mOhm @ 13.2A, 15V
Vgs(th) (Max) @ Id
3.6V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 600 V