C3M0160120J-TR
  • image of C3M0160120J-TR

C3M0160120J-TR

Category:
-
Manufacturer:
-
Description:
SIC, MOSFET, 160M, 1200V, TO-263
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$14.4

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C
17A (Tc)
Supplier Device Package
TO-263-7
Power Dissipation (Max)
90W (Tc)
Drain to Source Voltage (Vdss)
1200 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Technology
SiCFET (Silicon Carbide)
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 15 V
Vgs (Max)
+15V, -4V
Rds On (Max) @ Id, Vgs
208mOhm @ 8.5A, 15V
Vgs(th) (Max) @ Id
3.6V @ 2.33mA
Input Capacitance (Ciss) (Max) @ Vds
632 pF @ 1000 V