E3M0160120J2-TR
  • image of E3M0160120J2-TR

E3M0160120J2-TR

Category:
-
Manufacturer:
-
Description:
160m 1200V SiC FET, TO-263-7 XL
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$12.14

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Supplier Device Package
TO-263-7
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
104W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
15V
Technology
SiCFET (Silicon Carbide)
Vgs (Max)
+19V, -8V
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V
Rds On (Max) @ Id, Vgs
208mOhm @ 8.5A, 15V
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 1000 V
Vgs(th) (Max) @ Id
3.8V @ 2.33mA