EPC2619ENGRT
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EPC2619ENGRT

Category:
-
Manufacturer:
-
Description:
TRANS GAN 80V .0033OHM 6LGA
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
FET Feature
-
Grade
-
Qualification
-
Power Dissipation (Max)
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
Die
Supplier Device Package
Die
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 5 V
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds
1180 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta)
Vgs(th) (Max) @ Id
2.5V @ 5.5mA
Rds On (Max) @ Id, Vgs
3.3mOhm @ 16A, 5V