EPC8002
  • image of EPC8002

EPC8002

Category:
-
Manufacturer:
-
Description:
GANFET N-CH 65V 2A DIE
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$4.83

Request a Quote

Stock 43105

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Power Dissipation (Max)
-
Vgs(th) (Max) @ Id
2.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On)
5V
Operating Temperature
-40°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Package / Case
Die
Supplier Device Package
Die
Drain to Source Voltage (Vdss)
65 V
Technology
GaNFET (Gallium Nitride)
Vgs (Max)
+6V, -4V
Rds On (Max) @ Id, Vgs
530mOhm @ 500mA, 5V
Input Capacitance (Ciss) (Max) @ Vds
21 pF @ 32.5 V