FDFS2P103A
  • image of FDFS2P103A

FDFS2P103A

Category:
-
Manufacturer:
Description:
MOSFET P-CH 30V 5.3A 8SOIC
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$0.62

Request a Quote

Stock 11980

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Technology
MOSFET (Metal Oxide)
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
8-SOIC
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
5.3A (Ta)
Vgs(th) (Max) @ Id
3V @ 250µA
Drain to Source Voltage (Vdss)
30 V
Vgs (Max)
±25V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
900mW (Ta)
Rds On (Max) @ Id, Vgs
59mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
535 pF @ 15 V