FQPF4N80
  • image of FQPF4N80

FQPF4N80

Category:
-
Manufacturer:
Description:
MOSFET N-CH 800V 2.2A TO220F
Package:
Packaging:
Tube
RoHS：
YES
Price:
$1.21

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Power Dissipation (Max)
43W (Tc)
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
2.2A (Tc)
Package / Case
TO-220-3 Full Pack
Drain to Source Voltage (Vdss)
800 V
Input Capacitance (Ciss) (Max) @ Vds
880 pF @ 25 V
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5V @ 250µA
Supplier Device Package
TO-220F-3
Rds On (Max) @ Id, Vgs
3.6Ohm @ 1.1A, 10V