G65P06F
  • image of G65P06F

G65P06F

Category:
-
Manufacturer:
-
Description:
P-CH, -60V, 65A, RD(MAX)<18M@-10
Package:
Packaging:
Tube
RoHS：
YES
Price:
$1.9

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Specifications
Mounting Type
Through Hole
Part Status
Active
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Vgs(th) (Max) @ Id
3.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C
65A (Tc)
Power Dissipation (Max)
39W (Tc)
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 10 V
Rds On (Max) @ Id, Vgs
18mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds
6477 pF @ 25 V