GT52N10T
  • image of GT52N10T

GT52N10T

Category:
-
Manufacturer:
-
Description:
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
Package:
Packaging:
Tube
RoHS：
YES
Price:
$2.72

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Power Dissipation (Max)
100W (Tc)
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Rds On (Max) @ Id, Vgs
9mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2273 pF @ 50 V