HUF75329D3S
HUF75329D3S
  • image of HUF75329D3S
  • image of HUF75329D3S

HUF75329D3S

Category:
-
Manufacturer:
Description:
MOSFET N-CH 55V 20A TO252AA
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Drain to Source Voltage (Vdss)
55 V
Rds On (Max) @ Id, Vgs
26mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1060 pF @ 25 V
Supplier Device Package
TO-252AA
Power Dissipation (Max)
128W (Tc)
Gate Charge (Qg) (Max) @ Vgs
65 nC @ 20 V