IMBG120R017M2HXTMA1
  • image of IMBG120R017M2HXTMA1

IMBG120R017M2HXTMA1

Category:
-
Manufacturer:
Description:
SIC DISCRETE
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$20.19

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Drain to Source Voltage (Vdss)
1200 V
Power Dissipation (Max)
470W (Tc)
Technology
SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C
107A (Tc)
Vgs (Max)
+23V, -10V
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Supplier Device Package
PG-TO263-7-12
Rds On (Max) @ Id, Vgs
17.1mOhm @ 40.4A, 18V
Vgs(th) (Max) @ Id
5.1V @ 12.7mA
Gate Charge (Qg) (Max) @ Vgs
89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
2910 pF @ 800 V