IMBG65R026M2HXTMA1
  • image of IMBG65R026M2HXTMA1

IMBG65R026M2HXTMA1

Category:
-
Manufacturer:
Description:
SILICON CARBIDE MOSFET
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$11.95

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
Power Dissipation (Max)
263W (Tc)
Technology
SiCFET (Silicon Carbide)
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 18 V
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Vgs (Max)
+23V, -7V
Supplier Device Package
PG-TO263-7-12
Input Capacitance (Ciss) (Max) @ Vds
1499 pF @ 400 V
Rds On (Max) @ Id, Vgs
24mOhm @ 34.5A, 20V
Vgs(th) (Max) @ Id
5.6V @ 7mA