IMT65R050M2HXUMA1
  • image of IMT65R050M2HXUMA1

IMT65R050M2HXUMA1

Category:
-
Manufacturer:
Description:
SILICON CARBIDE MOSFET
Package:
Packaging:
Tube
RoHS：
YES
Price:
$3.51

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drain to Source Voltage (Vdss)
650 V
Technology
SiCFET (Silicon Carbide)
Package / Case
8-PowerSFN
Power Dissipation (Max)
237W (Tc)
Supplier Device Package
PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Vgs (Max)
+23V, -7V
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 18 V
Rds On (Max) @ Id, Vgs
46mOhm @ 18.2A, 20V
Vgs(th) (Max) @ Id
5.6V @ 3.7mA
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C
48.1A (Tc)