IMW65R107M1HXKSA1
  • image of IMW65R107M1HXKSA1

IMW65R107M1HXKSA1

Category:
-
Manufacturer:
Description:
MOSFET 650V NCH SIC TRENCH
Package:
Packaging:
Tube
RoHS：
YES
Price:
$7.4

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Power Dissipation (Max)
75W (Tc)
Drain to Source Voltage (Vdss)
650 V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
PG-TO247-3-41
Drive Voltage (Max Rds On, Min Rds On)
18V
Vgs (Max)
+23V, -5V
Rds On (Max) @ Id, Vgs
142mOhm @ 8.9A, 18V
Vgs(th) (Max) @ Id
5.7V @ 3mA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
496 pF @ 400 V