IMWH170R1K0M1XKSA1
  • image of IMWH170R1K0M1XKSA1

IMWH170R1K0M1XKSA1

Category:
-
Manufacturer:
Description:
IMWH170R1K0M1XKSA1
Package:
Packaging:
Tray
RoHS：
YES
Price:
$6.24

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-247-3
Power Dissipation (Max)
70W (Tc)
Current - Continuous Drain (Id) @ 25°C
5.4A (Tj)
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Drive Voltage (Max Rds On, Min Rds On)
12V, 15V
Vgs (Max)
15V, 12V
Supplier Device Package
PG-TO247-3-U04
Rds On (Max) @ Id, Vgs
880mOhm @ 1A, 15V
Vgs(th) (Max) @ Id
5.7V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
5.5 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds
233 pF @ 1000 V