IMZA65R007M2HXKSA1
  • image of IMZA65R007M2HXKSA1

IMZA65R007M2HXKSA1

Category:
-
Manufacturer:
Description:
SILICON CARBIDE MOSFET
Package:
Packaging:
Tube
RoHS：
YES
Price:
$31.68

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Power Dissipation (Max)
625W (Tc)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
210A (Tc)
Package / Case
TO-247-4
Drive Voltage (Max Rds On, Min Rds On)
15V, 20V
Vgs (Max)
+23V, -7V
Supplier Device Package
PG-TO247-4-U02
Rds On (Max) @ Id, Vgs
6.1mOhm @ 146.3A, 20V
Vgs(th) (Max) @ Id
5.6V @ 29.7mA
Gate Charge (Qg) (Max) @ Vgs
179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds
6359 pF @ 400 V