IPB029N15NM6ATMA1
  • image of IPB029N15NM6ATMA1

IPB029N15NM6ATMA1

Category:
-
Manufacturer:
Description:
TRENCH >=100V
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$8.2

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)
150 V
Supplier Device Package
PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 10 V
Power Dissipation (Max)
3.8W (Ta), 395W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 15V
Vgs(th) (Max) @ Id
4V @ 276µA
Input Capacitance (Ciss) (Max) @ Vds
9900 pF @ 75 V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 100A, 15V
Current - Continuous Drain (Id) @ 25°C
24A (Ta), 165A (Tc)