IPB35N12S3L26ATMA1
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IPB35N12S3L26ATMA1

Category:
-
Manufacturer:
Description:
MOSFET N-CHANNEL_100+
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Supplier Device Package
PG-TO263-3-2
Drain to Source Voltage (Vdss)
120 V
Power Dissipation (Max)
71W (Tc)
Vgs(th) (Max) @ Id
2.4V @ 39µA
Rds On (Max) @ Id, Vgs
26.3mOhm @ 35A, 10V