IPB65R190CFD7AATMA1
IPB65R190CFD7AATMA1
  • image of IPB65R190CFD7AATMA1
  • image of IPB65R190CFD7AATMA1

IPB65R190CFD7AATMA1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 650V 14A TO263-3
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$3.65

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Grade
Automotive
Qualification
AEC-Q101
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Drain to Source Voltage (Vdss)
650 V
Power Dissipation (Max)
77W (Tc)
Supplier Device Package
PG-TO263-3
Vgs(th) (Max) @ Id
4.5V @ 320µA
Rds On (Max) @ Id, Vgs
190mOhm @ 6.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1291 pF @ 400 V