IPB95R310PFD7ATMA1
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IPB95R310PFD7ATMA1

Category:
-
Manufacturer:
Description:
LOW POWER_NEW
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$4.74

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
125W (Tc)
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 10 V
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs (Max)
±30V
Supplier Device Package
PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C
17.5A (Tc)
Drain to Source Voltage (Vdss)
950 V
Vgs(th) (Max) @ Id
3.5V @ 520µA
Rds On (Max) @ Id, Vgs
310mOhm @ 10.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1765 pF @ 400 V