IPD200N15N3GATMA1
IPD200N15N3GATMA1
  • image of IPD200N15N3GATMA1
  • image of IPD200N15N3GATMA1

IPD200N15N3GATMA1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 150V 50A TO252-3
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.96

Request a Quote

Stock 37178

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Power Dissipation (Max)
150W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drain to Source Voltage (Vdss)
150 V
Supplier Device Package
PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 90µA
Input Capacitance (Ciss) (Max) @ Vds
1820 pF @ 75 V