IPD65R600E6ATMA1
IPD65R600E6ATMA1
  • image of IPD65R600E6ATMA1
  • image of IPD65R600E6ATMA1

IPD65R600E6ATMA1

Category:
-
Manufacturer:
Description:
MOSFET N-CH 650V 7.3A TO252-3
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C
7.3A (Tc)
Power Dissipation (Max)
63W (Tc)
Drain to Source Voltage (Vdss)
650 V
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Supplier Device Package
PG-TO252-3
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
Rds On (Max) @ Id, Vgs
600mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA