IPD70N12S3L12ATMA1
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IPD70N12S3L12ATMA1

Category:
-
Manufacturer:
Description:
MOSFET N-CHANNEL_100+
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Power Dissipation (Max)
125W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Supplier Device Package
PG-TO252-3-11
Drain to Source Voltage (Vdss)
120 V
Gate Charge (Qg) (Max) @ Vgs
77 nC @ 10 V
Rds On (Max) @ Id, Vgs
11.5mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
2.4V @ 83µA
Input Capacitance (Ciss) (Max) @ Vds
5550 pF @ 25 V