IPD90R1K2C3ATMA2
IPD90R1K2C3ATMA2
  • image of IPD90R1K2C3ATMA2
  • image of IPD90R1K2C3ATMA2

IPD90R1K2C3ATMA2

Category:
-
Manufacturer:
Description:
MOSFET N-CH 900V 5.1A TO252-3
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$2.34

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 10 V
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
5.1A (Tc)
Power Dissipation (Max)
83W (Tc)
Supplier Device Package
PG-TO252-3
Rds On (Max) @ Id, Vgs
1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id
3.5V @ 310µA
Input Capacitance (Ciss) (Max) @ Vds
710 pF @ 100 V