IPF010N06NF2SATMA1
  • image of IPF010N06NF2SATMA1

IPF010N06NF2SATMA1

Category:
-
Manufacturer:
Description:
TRENCH 40<-<100V
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$4.7

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Package / Case
TO-263-7, D2PAK (6 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs
305 nC @ 10 V
Rds On (Max) @ Id, Vgs
1.05mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.3V @ 246µA
Input Capacitance (Ciss) (Max) @ Vds
13800 pF @ 30 V
Supplier Device Package
PG-TO263-7-U02
Current - Continuous Drain (Id) @ 25°C
44A (Ta), 293A (Tc)