IPI052NE7N3G
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IPI052NE7N3G

Category:
-
Manufacturer:
Description:
N-CHANNEL POWER MOSFET
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$1.1

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Power Dissipation (Max)
150W (Tc)
Gate Charge (Qg) (Max) @ Vgs
68 nC @ 10 V
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package
PG-TO262-3
Rds On (Max) @ Id, Vgs
5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
3.8V @ 91µA
Input Capacitance (Ciss) (Max) @ Vds
4750 pF @ 37.5 V