IPI120P04P4L03AKSA1
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IPI120P04P4L03AKSA1

Category:
-
Manufacturer:
Description:
MOSFET P-CH 40V 120A TO262-3
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
FET Type
P-Channel
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
±16V
Power Dissipation (Max)
136W (Tc)
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Drain to Source Voltage (Vdss)
40 V
Input Capacitance (Ciss) (Max) @ Vds
15000 pF @ 25 V
Supplier Device Package
PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs
234 nC @ 10 V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2.2V @ 340µA