IPW65R041CFDFKSA2
IPW65R041CFDFKSA2
  • image of IPW65R041CFDFKSA2
  • image of IPW65R041CFDFKSA2

IPW65R041CFDFKSA2

Category:
-
Manufacturer:
Description:
MOSFET N-CH 650V 68.5A TO247-3
Package:
Packaging:
Tube
RoHS：
YES
Price:
$13.06

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-247-3
Power Dissipation (Max)
500W (Tc)
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
68.5A (Tc)
Rds On (Max) @ Id, Vgs
41mOhm @ 33.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 3.3mA
Input Capacitance (Ciss) (Max) @ Vds
8400 pF @ 100 V
Supplier Device Package
PG-TO247-3