IQD020N10NM5CGATMA1
  • image of IQD020N10NM5CGATMA1

IQD020N10NM5CGATMA1

Category:
-
Manufacturer:
Description:
OPTIMOS 6 POWER-TRANSISTOR
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$4.53

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Gate Charge (Qg) (Max) @ Vgs
134 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
9500 pF @ 50 V
Vgs(th) (Max) @ Id
3.8V @ 159µA
Package / Case
9-PowerTDFN
Power Dissipation (Max)
3W (Ta), 333W (Tc)
Supplier Device Package
PG-TTFN-9-U02
Current - Continuous Drain (Id) @ 25°C
26A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs
2.05mOhm @ 50A, 10V