IRF520NS
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IRF520NS

Category:
-
Manufacturer:
Description:
MOSFET N-CH 100V 9.7A D2PAK
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C
9.7A (Tc)
Rds On (Max) @ Id, Vgs
200mOhm @ 5.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds
330 pF @ 25 V
Supplier Device Package
D2PAK
Power Dissipation (Max)
3.8W (Ta), 48W (Tc)