IRF9610
  • image of IRF9610

IRF9610

Category:
-
Manufacturer:
Description:
MOSFET P-CH 200V 1.8A TO220AB
Package:
Packaging:
Tube
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
TW048U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.048 (T
TW027U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.027 (T
TW083U65C,RQ
Toshiba Semiconductor and Storage
N-CH SIC MOSFET, 650 V, 0.083 (T
CDMS24760-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24740-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24780-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
CDMS24720-170 SL
1700V THROUGH-HOLE MOSFET N-CHAN
SL3134K
Shenzhen Slkormicro Semicon Co., Ltd.
20V 750MA 150MW 1 N-CHANNEL SOT-
AM4N65P
MOSFET N-CH 650V 4A TO-220
AMB481P
MOSFET P-CH 80V 3.1A DFN1.6X1.6
Specifications
Part Status
Obsolete
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
200 V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
1.8A (Tc)
Rds On (Max) @ Id, Vgs
3Ohm @ 900mA, 10V
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Power Dissipation (Max)
20W (Tc)