IRF9Z30
  • image of IRF9Z30

IRF9Z30

Category:
-
Manufacturer:
Description:
MOSFET P-CH 50V 18A TO220AB
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Power Dissipation (Max)
74W (Tc)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Rds On (Max) @ Id, Vgs
140mOhm @ 9.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds
900 pF @ 25 V