IRFIB5N65A
  • image of IRFIB5N65A

IRFIB5N65A

Category:
-
Manufacturer:
Description:
MOSFET N-CH 650V 5.1A TO220-3
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Power Dissipation (Max)
60W (Tc)
Package / Case
TO-220-3 Full Pack, Isolated Tab
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
1417 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
5.1A (Tc)
Rds On (Max) @ Id, Vgs
930mOhm @ 3.1A, 10V