IXTP1R4N60P
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IXTP1R4N60P

Category:
-
Manufacturer:
-
Description:
MOSFET N-CH 600V 1.4A TO220AB
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
Power Dissipation (Max)
50W (Tc)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
5.2 nC @ 10 V
Rds On (Max) @ Id, Vgs
9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 25µA