IXTP1R6N50P
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IXTP1R6N50P

Category:
-
Manufacturer:
-
Description:
MOSFET N-CH 500V 1.6A TO220AB
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Power Dissipation (Max)
43W (Tc)
Grade
-
Qualification
-
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Drain to Source Voltage (Vdss)
500 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
Vgs (Max)
±30V
Gate Charge (Qg) (Max) @ Vgs
3.9 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C
1.6A (Tc)
Rds On (Max) @ Id, Vgs
6.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 25µA