IXTP8N50PM
  • image of IXTP8N50PM

IXTP8N50PM

Category:
-
Manufacturer:
-
Description:
MOSFET N-CH 500V 4A TO220AB
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Through Hole
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Package / Case
TO-220-3
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drain to Source Voltage (Vdss)
500 V
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Power Dissipation (Max)
41W (Tc)
Vgs (Max)
±30V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Rds On (Max) @ Id, Vgs
800mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1050 pF @ 25 V