IXTT30N60P
  • image of IXTT30N60P

IXTT30N60P

Category:
-
Manufacturer:
-
Description:
MOSFET N-CH 600V 30A TO268
Package:
Packaging:
Tube
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)
10V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drain to Source Voltage (Vdss)
600 V
Vgs (Max)
±30V
Supplier Device Package
TO-268AA
Package / Case
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Vgs(th) (Max) @ Id
5V @ 250µA
Power Dissipation (Max)
540W (Tc)
Gate Charge (Qg) (Max) @ Vgs
82 nC @ 10 V
Rds On (Max) @ Id, Vgs
240mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds
5050 pF @ 25 V