MJD200G
  • image of MJD200G

MJD200G

Category:
-
Manufacturer:
Description:
TRANS NPN 25V 5A DPAK
Package:
Packaging:
Tube
RoHS：
YES
Price:
$1.1

Request a Quote

Stock 2246

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
2N3906
Shenzhen Slkormicro Semicon Co., Ltd.
40V 625MW 100@10MA,1V 200MA PNP
MMBT3906T
Shenzhen Slkormicro Semicon Co., Ltd.
40V 150MW 200MA PNP SOT-523
S9013W
Shenzhen Slkormicro Semicon Co., Ltd.
25V 200MW 120@50MA,1V 500MA SOT-
2SB1132-R
Shenzhen Slkormicro Semicon Co., Ltd.
32V 500MW 1A PNP SOT-89
MMBT3904M
Shenzhen Slkormicro Semicon Co., Ltd.
40V 100MW 200MA NPN SOT-723
BC817-16
Shenzhen Slkormicro Semicon Co., Ltd.
45V 300MW 100@100MA,1V 500MA NPN
S8550T
Shenzhen Slkormicro Semicon Co., Ltd.
25V 300MW 500MA PNP SOT-523
MMBT3904T
Shenzhen Slkormicro Semicon Co., Ltd.
40V 150MW 100@10MA,10V 200MA NPN
2SA1774-R
Shenzhen Slkormicro Semicon Co., Ltd.
50V 150MW 120@0.1MA,6V 150MA SOT
2SAR579D3FRATLQ
ROHM Semiconductor
PNP, TO-252 (DPAK), -160V -1.5A,
Specifications
Part Status
Last Time Buy
Mounting Type
Surface Mount
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
25 V
Operating Temperature
-65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max)
100nA (ICBO)
Supplier Device Package
DPAK
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max)
5 A
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A, 1V
Frequency - Transition
65MHz
Power - Max
1.4 W