MMBTRC118SS
  • image of MMBTRC118SS

MMBTRC118SS

Category:
-
Manufacturer:
-
Description:
BIASED BJT SOT-23 NPN 2200OHM
Package:
Packaging:
Bulk
RoHS：
YES
Price:
$0.02

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
DTA143EE
Shenzhen Slkormicro Semicon Co., Ltd.
50V 150MW 30@10MA,5V 100MA PNP S
DTC124EE
Shenzhen Slkormicro Semicon Co., Ltd.
56@5MA,5V 150MW 100MA 50V SOT-52
DTA114YE
Shenzhen Slkormicro Semicon Co., Ltd.
68@5MA,5V 150MW 100MA 50V SOT-52
DTA114EE
Shenzhen Slkormicro Semicon Co., Ltd.
30@5MA,5V 150MW 100MA SOT-523
DTC114YE
Shenzhen Slkormicro Semicon Co., Ltd.
68@5MA,5V 150MW 100MA 50V SOT-52
DTC123JE
Shenzhen Slkormicro Semicon Co., Ltd.
80@10MA,5V 150MW 100MA 50V SOT-5
DTC123EE
Shenzhen Slkormicro Semicon Co., Ltd.
20@20MA,5V 150MW 100MA 50V SOT-5
DTA124EE
Shenzhen Slkormicro Semicon Co., Ltd.
56@5MA,5V 150MW 30MA 50V SOT-523
DTC144EE
Shenzhen Slkormicro Semicon Co., Ltd.
68@5MA,5V 1 NPN - BIAS PRESET 15
DDTA123EUA-TP
TRANSISTORS,SOT-323
Specifications
Part Status
Active
Mounting Type
Surface Mount
Grade
-
Qualification
-
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
-
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Collector Cutoff (Max)
500nA
Supplier Device Package
SOT-23-3 (TO-236)
Transistor Type
NPN - Pre-Biased
Resistors Included
R1 and R2
Power - Max
200 mW
Resistor - Emitter Base (R2)
10 kOhms
Resistor - Base (R1)
2.2 kOhms
Frequency - Transition
250 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce
33 @ 10mA, 5V