NTHL015N065SC1
NTHL015N065SC1
  • image of NTHL015N065SC1
  • image of NTHL015N065SC1

NTHL015N065SC1

Category:
-
Manufacturer:
Description:
SILICON CARBIDE (SIC) MOSFET - 1
Package:
Packaging:
Tube
RoHS：
YES
Price:
$31.11

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Specifications
Mounting Type
Through Hole
Part Status
Active
FET Type
N-Channel
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Package / Case
TO-247-3
Drain to Source Voltage (Vdss)
650 V
Supplier Device Package
TO-247-3
Current - Continuous Drain (Id) @ 25°C
163A (Tc)
Technology
SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Rds On (Max) @ Id, Vgs
18mOhm @ 75A, 18V
Vgs(th) (Max) @ Id
4.3V @ 25mA
Gate Charge (Qg) (Max) @ Vgs
283 nC @ 18 V
Vgs (Max)
+22V, -8V
Input Capacitance (Ciss) (Max) @ Vds
4790 pF @ 325 V
Power Dissipation (Max)
643W (Tc)