NVB6412ANT4G
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NVB6412ANT4G

Category:
-
Manufacturer:
Description:
MOSFET N-CH 100V 58A D2PAK-3
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Supplier Device Package
D2PAK
Input Capacitance (Ciss) (Max) @ Vds
3500 pF @ 25 V
Power Dissipation (Max)
167W (Tc)
Gate Charge (Qg) (Max) @ Vgs
100 nC @ 10 V
Rds On (Max) @ Id, Vgs
18.2mOhm @ 58A, 10V