PDTC124XS,126
PDTC124XS,126
  • image of PDTC124XS,126
  • image of PDTC124XS,126

PDTC124XS,126

Category:
-
Manufacturer:
Description:
TRANS PREBIAS NPN 50V TO92-3
Package:
Packaging:
Tape & Box (TB)
RoHS：
YES

Request a Quote

Stock 1600

Not satisfied with the price? Fill in the form below to send a quick RFQ and we will respond promptly.

Similar Models
DTA143EE
Shenzhen Slkormicro Semicon Co., Ltd.
50V 150MW 30@10MA,5V 100MA PNP S
DTC124EE
Shenzhen Slkormicro Semicon Co., Ltd.
56@5MA,5V 150MW 100MA 50V SOT-52
DTA114YE
Shenzhen Slkormicro Semicon Co., Ltd.
68@5MA,5V 150MW 100MA 50V SOT-52
DTA114EE
Shenzhen Slkormicro Semicon Co., Ltd.
30@5MA,5V 150MW 100MA SOT-523
DTC114YE
Shenzhen Slkormicro Semicon Co., Ltd.
68@5MA,5V 150MW 100MA 50V SOT-52
DTC123JE
Shenzhen Slkormicro Semicon Co., Ltd.
80@10MA,5V 150MW 100MA 50V SOT-5
DTC123EE
Shenzhen Slkormicro Semicon Co., Ltd.
20@20MA,5V 150MW 100MA 50V SOT-5
DTA124EE
Shenzhen Slkormicro Semicon Co., Ltd.
56@5MA,5V 150MW 30MA 50V SOT-523
DTC144EE
Shenzhen Slkormicro Semicon Co., Ltd.
68@5MA,5V 1 NPN - BIAS PRESET 15
DDTA123EUA-TP
TRANSISTORS,SOT-323
Specifications
Part Status
Obsolete
Mounting Type
Through Hole
Power - Max
500 mW
Supplier Device Package
TO-92-3
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Transistor Type
NPN - Pre-Biased
Resistors Included
R1 and R2
Resistor - Emitter Base (R2)
47 kOhms
Current - Collector Cutoff (Max)
1µA
Resistor - Base (R1)
22 kOhms
Vce Saturation (Max) @ Ib, Ic
150mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 5V