PJD9P06A_L2_00001
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PJD9P06A_L2_00001

Category:
-
Manufacturer:
-
Description:
60V P-CHANNEL ENHANCEMENT MODE M
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$1.55

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Specifications
Part Status
Active
Mounting Type
Surface Mount
Technology
MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs
8.3 nC @ 10 V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Supplier Device Package
TO-252AA
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 30 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Ta), 7A (Tc)
Rds On (Max) @ Id, Vgs
190mOhm @ 3.5A, 10V
Power Dissipation (Max)
2W (Ta), 15.6W (Tc)