PJQ1902_R1_00001
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PJQ1902_R1_00001

Category:
-
Manufacturer:
-
Description:
30V N-CHANNEL ENHANCEMENT MODE M
Package:
Packaging:
Tape & Reel (TR)
RoHS：
YES

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Specifications
Part Status
Obsolete
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Vgs (Max)
±10V
Power Dissipation (Max)
700mW (Ta)
Current - Continuous Drain (Id) @ 25°C
500mA (Ta)
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 250µA
Package / Case
3-UFDFN
Rds On (Max) @ Id, Vgs
1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs
0.87 nC @ 4.5 V
Supplier Device Package
3-DFN (0.6x1)
Input Capacitance (Ciss) (Max) @ Vds
34 pF @ 15 V