PJW5N10-AU_R2_000A1
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PJW5N10-AU_R2_000A1

Category:
-
Manufacturer:
-
Description:
100V N-CHANNEL ENHANCEMENT MODE
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$0.9

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Operating Temperature
-55°C ~ 150°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Package / Case
TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Supplier Device Package
SOT-223
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
130mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C
3.1A (Ta), 5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds
707 pF @ 30 V
Power Dissipation (Max)
3.1W (Ta), 8W (Tc)