PJW5N10A_R2_00001
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PJW5N10A_R2_00001

Category:
-
Manufacturer:
-
Description:
100V N-CHANNEL ENHANCEMENT MODE
Package:
Packaging:
Cut Tape (CT)
RoHS：
YES
Price:
$0.86

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Specifications
Part Status
Active
Mounting Type
Surface Mount
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Vgs (Max)
±20V
FET Feature
-
Grade
-
Qualification
-
Operating Temperature
-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Package / Case
TO-261-4, TO-261AA
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Supplier Device Package
SOT-223
Input Capacitance (Ciss) (Max) @ Vds
1413 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs
115mOhm @ 4A, 10V
Power Dissipation (Max)
3.1W (Ta), 5.2W (Tc)